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June 1996
NDT452AP
P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field
effect transistors are produced using Fairchild's proprietary,
high cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and DC motor
Features
-5A, -30V. R DS(ON) = 0.065 ? @ V GS = -10V
R DS(ON) = 0.1 ? @ V GS = -4.5V.
High density cell design for extremely low R DS(ON) .
High power and current handling capability in a widely used
surface mount package.
control.
________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
NDT452AP
-30
±20
Units
V
V
I D
Drain Current - Continuous
(Note 1a)
-5
A
- Pulsed
- 15
P D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
(Note 1c)
1.3
1.1
T J ,T STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
* Order option J23Z for cropped center drain lead.
? 1997 Fairchild Semiconductor Corporation
NDT452AP Rev. B1
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相关代理商/技术参数
NDT452AP(J23Z)
制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223
NDT452AP
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-223
NDT452AP_J23Z
功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT452AP-CUT TAPE
制造商:FAIRCHILD 功能描述:NDT Series P-Ch 30V 0.065 O Enhancement Mode Field Effect Transistor SOT-223
NDT452APX
制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P-Channel 30V 5A SOT223
NDT452P
功能描述:MOSFET DISC BY MFG 2/02
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT452P_J23Z
功能描述:MOSFET DISC BY MFG 2/02
RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT452PCT
制造商:FCS 功能描述:
